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Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells

✍ Scribed by T. Mchedlidze; T. Arguirov; S. Kouteva-Arguirova; G. Jia; M. Kittler; R. Rölver; B. Berghoff; M. Först; D.L. Bätzner; B. Spangenberg


Book ID
108290014
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
482 KB
Volume
516
Category
Article
ISSN
0040-6090

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We have investigated the influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells (MQWs) with an indium composition around 20%. The samples with five-pairs InGaN/GaN MQWs were grown on sapphire substrates by metalorganic chemical vapor deposition. Photo