## Abstract A comprehensive characterization of the optical properties of wurtzite InN films grown by molecular beam epitaxy on Si(111) substrates is presented. Two types of films are investigated in this work: InN on AlN/Si(111) and InN on GaN/AlN/Si(111). Their properties are compared to a layer
Structure and optical properties of multi-quantum wells grown on Si(111) substrates
β Scribed by X.Q. Gu; L.P. Zhu; Z.Z. Ye; H.P. He; F. Liu; W. Jaeger; P.K. Chu; M.X. Qiu; Y.Z. Zhang; J.Y. Huang
- Book ID
- 108268985
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 441 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0749-6036
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In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer-by-layer two-dimensional growth mode allows to obtain reflection high-energy electron diffraction intensity
## Abstract The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vaporβliquidβsolid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, re
## Abstract We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at lowβdefect density Ge NW β