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Second-harmonic spectroscopy of electronic structure of Si/SiO2 multiple quantum wells

✍ Scribed by T.V. Dolgova; V.G. Avramenko; A.A. Nikulin; G. Marowsky; A.F. Pudonin; A.A. Fedyanin; O.A. Aktsipetrov

Publisher
Springer
Year
2002
Tongue
English
Weight
505 KB
Volume
74
Category
Article
ISSN
0721-7269

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## Abstract We report on fabrication and low temperature transport properties of double‐gate SiO~2~–Si–SiO~2~ quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport