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Electronic structure of modulation n-doped multiple quantum well

✍ Scribed by C. López; J. Sánchez-dehesa; F. Meseguer; F. Borondo; K. Ploog

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
401 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to 19 m 2 =V s. Fractional quantum Hall states at ÿrst-and second-order ÿlling factors, and up to = 11 3 , are observed. Shubnikovde Haas oscillations of high-density samples reveal that