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Large-signal characteristics of InP-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers

โœ Scribed by Samelis, A.; Pavlidis, D.; Chandrasekhar, S.; Lunardi, L.M.; Rios, J.

Book ID
114536636
Publisher
IEEE
Year
1996
Tongue
English
Weight
910 KB
Volume
43
Category
Article
ISSN
0018-9383

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โœ A. Samelis; D. Pavlidis; S. Chandrasekhar; L. M. Lunardi ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 510 KB

## A model for soft breakdown effects in InP/InGaAs-based single HBTs i s developed. The effects of large-signal excitation on the operational characteristics of optoelectronic preamplijiers, such as the transducer and transimpedance gain of individual transistors, are addressed. These effects depen