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Analysis of the large-signal characteristics of InP/InGaAs-based optoelectronic preamplifiers

✍ Scribed by A. Samelis; D. Pavlidis; S. Chandrasekhar; L. M. Lunardi


Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
510 KB
Volume
11
Category
Article
ISSN
0895-2477

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✦ Synopsis


A model for soft breakdown effects in InP/InGaAs-based single HBTs i s developed. The effects of large-signal excitation on the operational characteristics of optoelectronic preamplijiers, such as the transducer and transimpedance gain of individual transistors, are addressed. These effects depend on optoelectronic integrated-circuit (OEIC) design and are associated with self-bias variations due to input power levels. Cascode designs are relatively immune to these effects, whereas basic coupled

amplifiers are more sensitive (9-dB R 1)s. 3-dB R transimpedance reduction) for the same input power increase from -35 to -5 dBm.