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Analysis of nonlinear effects and calculation of EMC characteristics of SHF amplifier based on heterojunction bipolar transistor

✍ Scribed by L. I. Averina; A. M. Bobreshov; A. V. Hripushin

Book ID
111497672
Publisher
Allerton Press, Inc.
Year
2009
Tongue
English
Weight
223 KB
Volume
52
Category
Article
ISSN
0735-2727

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In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well