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Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors

โœ Scribed by Dimitris Pavlidis

Book ID
108362466
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
145 KB
Volume
39
Category
Article
ISSN
0026-2714

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InGaP/GaAs heterojunction bipolar transi
InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability
โœ Liu, Xiang; Yuan, Jiann S.; Liou, Juin J. ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 189 KB

Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec