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Simulation of electrical characteristics of InP double-heterojunction bipolar transistors with InGaAsSb base

โœ Scribed by Yang-Hua Chang; Rong-Hao Syu

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
236 KB
Volume
50
Category
Article
ISSN
0026-2714

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๐Ÿ“œ SIMILAR VOLUMES

Simulation study of InP-based PNP hetero
Simulation study of InP-based PNP heterojunction bipolar transistors and incorporation of nonclassical effects
โœ S. Shi; K.P. Roenker; T. Kumar; M.M. Cahay; William E. Stanchina ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 335 KB

This paper describes a numerical approach to the modeling of PNP HBTs in the InP-based materials systems (InP/InGaAs and InAlAs/InGaAs). Initial device analysis was achieved in the drift-diffusion limit by self-consistent numerical solution of the Poisson, carrier continuity and conductor equations