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Analysis of DC characteristics of GaAs double heterojunction bipolar transistors (DHBTs) with a pseudomorphic GaAsSb base

โœ Scribed by Yuan Tian; Hong Wang


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
177 KB
Volume
37
Category
Article
ISSN
0026-2692

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๐Ÿ“œ SIMILAR VOLUMES


Analysis of double heterojunction bipola
โœ Zheng Zeng; Ming Qi; Haitao Zhang; Jinsheng Luo ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 155 KB

In this paper, the heavily carbon doped \(\mathrm{GaAs} / \mathrm{In}_{\mathbf{x}} \mathrm{Ga}_{1-\mathbf{x}}\) As strained-Layer superlattice (SLS) is proposed as a base material of a heterojunction bipolar transistor (HBT) to increase the hole concentration and decrease the interface defects. The