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Simulation of graded-base bipolar transistor characteristics fabricated with a focused ion beam

✍ Scribed by A.J. Steckl; C.-M. Lin; S.-D. Chu; J.C. Corelli

Publisher: Elsevier Science
Year: 1986
Tongue: English
Weight: 410 KB
Volume: 5
Category: Article
ISSN: 0167-9317
DOI: 10.1016/0167-9317(86)90045-6

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