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Kink-related noise overshoot in SOI n-MOSFETS operating at 4.2 K

โœ Scribed by Simoen, E.; Dierickx, B.; Claeys, C.


Book ID
111676474
Publisher
The Institution of Electrical Engineers
Year
1992
Tongue
English
Weight
306 KB
Volume
28
Category
Article
ISSN
0013-5194

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Field-induced generation-recombination n
โœ E.A. Hendriks; R.J.J. Zijlstra ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science โš– 358 KB

The spectral noise intensity of the drain current of an n-channel (100) Si-MOSFET in strong inversion was measured as a function of drain current and gate voltage at T = 4.2 K, In addition to flicker noise and white noise it was possible to distinguish a Lorentzian, which was due to generation-recom