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Anomalous kink-related excess noise in MOSFETs at 4.2 K

โœ Scribed by Dierickx, B.; Simoen, E.; Cos, S.; Vermeiren, J.; Claeys, C.; Declerck, G.J.


Book ID
111676696
Publisher
IEEE
Year
1991
Tongue
English
Weight
592 KB
Volume
38
Category
Article
ISSN
0018-9383

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Field-induced generation-recombination n
โœ E.A. Hendriks; R.J.J. Zijlstra ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science โš– 358 KB

The spectral noise intensity of the drain current of an n-channel (100) Si-MOSFET in strong inversion was measured as a function of drain current and gate voltage at T = 4.2 K, In addition to flicker noise and white noise it was possible to distinguish a Lorentzian, which was due to generation-recom