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Field-induced generation-recombination noise in (100) n-channel Si-MOSFET's at T = 4.2 K: I. Theory

✍ Scribed by E.A. Hendriks; R.J.J. Zijlstra

Publisher: Elsevier Science
Year: 1988
Weight: 444 KB
Volume: 147
Category: Article
ISSN: 0378-4363
DOI: 10.1016/0378-4363(88)90286-0

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