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1/f noise in (100) n-channel Si-MOSFETs from T = 4.2 K to T = 295 K

✍ Scribed by E.A. Hendriks; R.J.J. Zijlstra

Publisher: Elsevier Science
Year: 1988
Tongue: English
Weight: 677 KB
Volume: 31
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(88)90413-3

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