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Kinetics of growth of surface amorphous layers under irradiation of silicon with low-energy light ions

โœ Scribed by A. I. Titov; A. Yu. Azarov; V. S. Belyakov


Book ID
110133906
Publisher
Springer
Year
2003
Tongue
English
Weight
100 KB
Volume
37
Category
Article
ISSN
1063-7826

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Joint experimental and theoretical study of low-energy ion-beam-assisted Ge growth on Si has been carried out. Pulsed ion-beam action results in the increase of Ge nanoislands density and decrease of average island size and size dispersion. The effect is interpreted in terms of ion-beam-induced form