Porous Si was obtained by electrochemical etching of p-doped Si(1 0 0) and progressively irradiated with H + , He + or Ne 2+ ions. Photoluminescence (PL) spectra were obtained as a function of the displacement-per-atom parameter up to $0.01 level, which nearly extinguished emission. The PL quenching
β¦ LIBER β¦
Controlling surface states and photoluminescence of porous silicon by low-energy-ion irradiation
β Scribed by X.W. Du; Y. Jin; N.Q. Zhao; Y.S. Fu; S.A. Kulinich
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 555 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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