Solid phase epitaxial regrowth of amorph
β
S. Ruffell; I.V. Mitchell; P.J. Simpson
π
Article
π
2006
π
Elsevier Science
π
English
β 210 KB
Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm Γ2 up to 1e16 cm Γ2 , the associa