𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Ion irradiation of porous silicon: The role of surface states

✍ Scribed by L.G. Jacobsohn; B.L. Bennett; D.W. Cooke; R.E. Muenchausen; M. Nastasi

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
127 KB
Volume
242
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

✦ Synopsis

Porous Si was obtained by electrochemical etching of p-doped Si(1 0 0) and progressively irradiated with H + , He + or Ne 2+ ions. Photoluminescence (PL) spectra were obtained as a function of the displacement-per-atom parameter up to $0.01 level, which nearly extinguished emission. The PL quenching efficiency, which showed a dependence on the chemical nature of the implanted species, was correlated with the self-recovery of the defects as investigated by channeling spectrometry. Emission recovery and enhancement after irradiation indicated the importance of surface states in the PL mechanism.

πŸ“œ SIMILAR VOLUMES

Micro-Raman study of ion-irradiated oxid
Micro-Raman study of ion-irradiated oxidized silicon surfaces
✍ R. Tripathi; S. Kar; H. D. Bist πŸ“‚ Article πŸ“… 1993 πŸ› John Wiley and Sons 🌐 English βš– 330 KB

## Abstract Micro‐Raman studies were performed on ion‐irradiated oxidized silicon surfaces with different ion energies, ion fluences and subsequent hydrogenation to determine the efficacy and sensitivity for obtaining information on the degree of ion beam‐induced damage in very thin (__ca.__ 100 Γ…)