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Micro-Raman study of ion-irradiated oxidized silicon surfaces

✍ Scribed by R. Tripathi; S. Kar; H. D. Bist

Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
330 KB
Volume
24
Category
Article
ISSN
0377-0486

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✦ Synopsis

Abstract

Micro‐Raman studies were performed on ion‐irradiated oxidized silicon surfaces with different ion energies, ion fluences and subsequent hydrogenation to determine the efficacy and sensitivity for obtaining information on the degree of ion beam‐induced damage in very thin (ca. 100 Å) layers of silicon subsurface and the top oxide. The variations in the Raman spectra were interpreted in terms of the degree of amorphization produced in the silicon sub‐surface by the ion beam and depolymerization of the top SiO~2~ layer.

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