High-quality silicon dioxide films have been deposited in the temperature range 150-425 °C by electron-cyclotron resonance chemical-vapour deposition (ECR-CVD) using an oxygen plasma with silane introduced downstream. The interface state densities of 10 nm thick films measured by the high-low freque
✦ LIBER ✦
Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma
✍ Scribed by M. J. Herna´ndez; M. Cervera; J. Garrido; J. Marti´nez; J. Piqueras
- Book ID
- 110271692
- Publisher
- Springer US
- Year
- 1999
- Tongue
- English
- Weight
- 177 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0957-4522
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