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Ion bombardment of AlN films deposited in a reactive sputtering process with accurate control of the mass flow of the reactive gas

✍ Scribed by K. Alkjærsig; H.B. Christensen; B.K. Gupta; H. Jensen; U.M. Jensen; G.N. Pedersen; G. Sørensen

No coin nor oath required. For personal study only.

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