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Ion beam induced defects in crystalline silicon

✍ Scribed by F Cristiano; N Cherkashin; X Hebras; P Calvo; Y Lamrani; E Scheid; B de Mauduit; B Colombeau; W Lerch; S Paul; A Claverie


Book ID
113822666
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
605 KB
Volume
216
Category
Article
ISSN
0168-583X

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Electron-beam-induced activity of defect
✍ P.R. Wilshaw; T.S. Fell; C.A. Amaku; M.D. de Coteau πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 691 KB

The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. T