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Proximity gettering of Au to ion beam induced defects in silicon

✍ Scribed by J. Wong-Leung; J.S. Williams; R.G. Elliman; E. Nygren; D.J. Eaglesham; D.C. Jacobson; J.M. Poate


Book ID
113284923
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
581 KB
Volume
96
Category
Article
ISSN
0168-583X

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The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. T