Investigations of lattice defects by means of X-rays. II. General theory
โ Scribed by L.L. Van Reijen
- Publisher
- Elsevier Science
- Year
- 1944
- Weight
- 875 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0031-8914
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โฆ Synopsis
This paper forms part II of a series of publications on the above subject. Part I is an article by J. J. A r 1 m a n and R. I< r o n i g 1 ) on lattice defects in tin.
๐ SIMILAR VOLUMES
The long spacing of several compounds of the dihydrazide series, (CH,)n (CONHNH2)2, was measured. The length of this spacing is proportional to the number of C-atoms in the chain. Per C-atom an increase of 1.29 h is found. The intensity ratio of different orders of reflexion was estimated. It could
Multi-crystal X-ray diffraction has been used to study the strain located close to the Si-SiO 2 interface of device grade SIMOX substrates. It is found that the strain is located within a layer whose thickness is about 15% of the silicon overlayer. The quality of this layer can be restored by anneal