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Lattice disorder investigation of SIMOX film by multi-crystal X-ray diffractometry

✍ Scribed by A.Yu. Nikulin; A.A. Snigirev; V.V. Starkov; P.L.E. Hemment; A.F. Vyatkin

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 335 KB
Volume: 13
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(92)90129-w

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✦ Synopsis

Multi-crystal X-ray diffraction has been used to study the strain located close to the Si-SiO 2 interface of device grade SIMOX substrates. It is found that the strain is located within a layer whose thickness is about 15% of the silicon overlayer. The quality of this layer can be restored by annealing at 1000 °C.

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