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Investigation of MOVPE-grown In0.53Ga0.47 As/InP multi-quantum wells by Raman spectroscopy and X-ray diffractometry

✍ Scribed by J. Finders; M. Keuter; D. Gnoth; J. Geurts; J. Woitok; A. Kohl; R. Müller; K. Heime


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
345 KB
Volume
21
Category
Article
ISSN
0921-5107

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✦ Synopsis


InGaAs/InP multi-quantum well structures, grown by metal-organic vapour phase-epitaxy, were investigated by Raman spectroscopy and X-ray diffractometry to analyse the influence of precursor gas switching parameters on the interface abruptness. Owing to carry-over effects, InAsP is formed at the InGaAs-to-InP interface for low PH 3 purging times (1 s), while for purging times greater than 4 s exchange of As by P leads to the formation of an InGaAsP interface layer, which for purging beyond 10 s saturates at a thickness of 1.2 nm.


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