Investigation of MOVPE-grown In0.53Ga0.47 As/InP multi-quantum wells by Raman spectroscopy and X-ray diffractometry

✍ Scribed by J. Finders; M. Keuter; D. Gnoth; J. Geurts; J. Woitok; A. Kohl; R. Müller; K. Heime

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 345 KB
• Volume: 21
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90339-o

✦ Synopsis

InGaAs/InP multi-quantum well structures, grown by metal-organic vapour phase-epitaxy, were investigated by Raman spectroscopy and X-ray diffractometry to analyse the influence of precursor gas switching parameters on the interface abruptness. Owing to carry-over effects, InAsP is formed at the InGaAs-to-InP interface for low PH 3 purging times (1 s), while for purging times greater than 4 s exchange of As by P leads to the formation of an InGaAsP interface layer, which for purging beyond 10 s saturates at a thickness of 1.2 nm.