InGaAs/InP multi-quantum well structures, grown by metal-organic vapour phase-epitaxy, were investigated by Raman spectroscopy and X-ray diffractometry to analyse the influence of precursor gas switching parameters on the interface abruptness. Owing to carry-over effects, InAsP is formed at the InGa
β¦ LIBER β¦
Thickness control of InP and In0.53 Ga0.47 As thin films by energy-dispersive X-ray spectrometry
β Scribed by E. Peiner; K. Hansen; A. Schlachetzki
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 805 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0040-6090
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