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Investigation of zirconium oxynitride thin films deposited by reactive pulsed magnetron sputtering

✍ Scribed by Mohamed, S H; Abd El-Rahman, A M; Ahmed, Mahrous R


Book ID
120400692
Publisher
Institute of Physics
Year
2007
Tongue
English
Weight
578 KB
Volume
40
Category
Article
ISSN
0022-3727

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Aluminium nitride thin films deposited b
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AlN-films prepared by dc reactive magnetron sputtering. AlN in an Ar+N 2 gas mixture have been prepared and their microstructure, hardness, refractive index and IR transmittance examined. At l = 640 nm the refractive index was 1.93 and k = 3Γ—10 -3 ; high transmission occurred between [??] structure