Titanium oxynitride thin films sputter deposited by the reactive gas pulsing process
✍ Scribed by Jean-Marie Chappé; Nicolas Martin; Jan Lintymer; Fabrice Sthal; Guy Terwagne; Jamal Takadoum
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 270 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Fe-O-N films were deposited on glass and silicon substrates using two reactive magnetron sputtering processes. In the first process called conventional process (CP), the oxygen flow rate was kept constant during the deposition duration. On the other hand, the oxygen flow rate was pulsed in the secon
Titanium oxynitride (TiN x O y ) films have been deposited onto polyethylene terephthalate (PET) substrates by reactive radio frequency (RF) magnetron sputtering. The influence of the nitrogen (N 2 ) partial pressure in the discharge atmosphere, with a set pressure of 0.133 Pa, was examined. Other d
In contrast with PECVD technology, reactive sputtering of graphite allows an independent control of the substrate bias. This characteristic permits the modification of film properties without varying the plasma composition. In the present study, the characteristics of DLC films grown by pulsed-DC re