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Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

✍ Scribed by Stoklas, R.; GregusÌovaÌ, D.; NovaÌk, J.; Vescan, A.; KordosÌ, P.

Book ID: 120217552
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 558 KB
Volume: 93
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2990627

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