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Investigation of the parameters which control the growth of {111} and {111} faces of GaAs by chemical vapour deposit

✍ Scribed by J.L. Laporte; M. Cadoret; R. Cadoret


Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
871 KB
Volume
50
Category
Article
ISSN
0022-0248

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