✦ LIBER ✦

Investigation of surface states on the polar (111) and (111) faces of GaAs by photoelectron spectroscopy

✍ Scribed by W. Ranke; K. Jacobi

Publisher: Elsevier Science
Year: 1973
Tongue: English
Weight: 306 KB
Volume: 13
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(73)90464-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation of the parameters which co

Investigation of the parameters which control the growth of {111} and {111} faces of GaAs by chemical vapour deposit

✍ J.L. Laporte; M. Cadoret; R. Cadoret 📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 871 KB

Identification of Xe interface states in

Identification of Xe interface states in the Xe(111)/Pt(111) system by spin-resolved photoelectron spectroscopy

✍ B. Kessler; N. Müller; B. Schmiedeskamp; U. Heinzmann 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 324 KB

V/III Ratio Dependence of Polarity of Ga

V/III Ratio Dependence of Polarity of GaN Grown on GaAs (111)A-Ga and (111)B-As Surfaces by MOMBE

✍ O. Takahashi; T. Nakayama; R. Souda; F. Hasegawa 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB 👁 2 views

In order to investigate the influence of the substrate polarity and growth conditions on the polarity, GaN was grown on GaAs (111)A-Ga and B-As surfaces with different V/III ratios by metalorganic molecular beam epitaxy (MOMBE). It was found that for GaN grown on GaAs (111)A-Ga surface polarity was

Atomic layer epitaxy of CdTe on the pola

Atomic layer epitaxy of CdTe on the polar (111)A and (111)B surfaces of CdTe substrates

✍ M. Pessa; O. Jylhä; M.A. Herman 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 482 KB

Studies of Mandelstamm-Brillouin light s

Studies of Mandelstamm-Brillouin light scattered by the surface of (111)-, (110)-cutted GaAs, and (111)-cutted InSb crystals

✍ V.V Aleksandrov; Ju.B Potapova 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 425 KB

Behaviour of surface states on a GaAs/Al

Behaviour of surface states on a GaAs/AlGaAs heterostructure investigated by capacitance spectroscopy

✍ K. Ali; E. Skuras; S. Vallis; A.R. Long; I.A. Larkin; J.H. Davies; M.C. Holland; 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 42 KB

Low temperature depletion capacitance-voltage data, taken from a novel open design of surface superlattice fabricated on a GaAs/AlGaAs heterostructure, are compared with two theoretical models. These assume either that the Fermi level on the free semiconductor surface is pinned, or that the surface