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Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes

โœ Scribed by A. A. Lebedev; D. V. Davydov; V. V. Zelenin; M. L. Korogodskii


Book ID
110120157
Publisher
Springer
Year
1999
Tongue
English
Weight
34 KB
Volume
33
Category
Article
ISSN
1063-7826

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The temperature dependence of current-voltage (I-V) characteristics of as-fabricated and annealed Ni/n-type 6H-SiC Schottky diode has been investigated in the temperature range of 100-500 K. The forward I-V characteristics have been analysed on the basis of standard thermionic emission theory. It ha