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Investigation of silicon etching and silicon dioxide bubble formation during silicon oxidation in HCl-oxygen atmospheres

✍ Scribed by D.W. Hess; R.C. McDonald


Publisher
Elsevier Science
Year
1977
Tongue
English
Weight
289 KB
Volume
42
Category
Article
ISSN
0040-6090

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## Abstract An investigation is reported on the growth and structure of the scale formed on a ferritic Fe‐1.5 wt.% Si alloy exposed to carbon‐dioxide‐carbon monooxide atmospheres at 1000Β°C. The amorphous silica film on the metallographically polished specimens crystallized to β‐cristobalite. Wustit