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117. Investigation of properties and applications for protection of p-n junction of oxide film prepared by the bombardment of silicon by atomic oxygen ions: V M Gusev et al, Radiotekh Elektron, 16 (8), 1971, 1462–1467 (in Russian)


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
128 KB
Volume
23
Category
Article
ISSN
0042-207X

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