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Investigation of implanted gallium depth distributions in ZnSxSe-x by EPMA

✍ Scribed by Ammann, Norbert ;Gleitsmann, G�tz ;Heuken, Michael ;Heime, Klaus ;Karduck, Peter


Book ID
105132747
Publisher
Springer-Verlag
Year
1994
Weight
497 KB
Volume
114-115
Category
Article
ISSN
0344-838X

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The depth distribution of phosphorus implanted in titanium at 20 keV with doses ranging from 1 Â 1015 to 3 Â 1017 cm-2 was investigated by AES, SIMS and XPS. For small doses (O1016 cm-2) Gaussian-like phosphorus proÐles have been observed. For doses > 1017 cm-2 the depth proÐles suggest that a TiP-l