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Comparison between gallium-implanted layers of ZnSe and ZnSxSe1−x by optical, electrical and electron beam characterization methods

✍ Scribed by G. Gleitsmann; N. Ammann; J. Hermans; A. Schneider; J. Geurts; P. Karduck; M. Heuken


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
494 KB
Volume
138
Category
Article
ISSN
0022-0248

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