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Investigation of GaAs homojunction bipolar transistor with delta doping emitter structure

✍ Scribed by Wei, H.C.; Wang, Y.H.; Houng, M.P.

Book ID
114447500
Publisher
The Institution of Electrical Engineers
Year
1995
Tongue
English
Weight
814 KB
Volume
142
Category
Article
ISSN
1350-2409

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πŸ“œ SIMILAR VOLUMES

Investigation of an InGaP/GaAs heterostr
Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike
✍ Shiou-Ying Cheng πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 297 KB

In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide-bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide-bandgap N-type InGaP confinement layer and a narrow-bandgap