Investigation of AlN buffer layers on 6H
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H. Behmenburg; C. Giesen; R. Srnanek; J. Kovac; H. Kalisch; M. Heuken; R.H. Jans
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Article
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2011
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Elsevier Science
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English
β 839 KB
In this paper, the influence of V/III molar flow ratio during AlN growth on SiC on growth mode and in-plane strain is investigated. AlN layers of $ 300 nm thickness were grown by metal-organic vapor phase epitaxy (MOVPE) on semi-insulating 6H-SiC and the V/III ratio was changed from 240 to 8200 on f