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Domain structures of CdTe layers grown by MOCVD on offset-angle sapphire substrates

โœ Scribed by Kenji Maruyama; Mitsuo Yoshikawa; Hiroshi Takigawa


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
599 KB
Volume
93
Category
Article
ISSN
0022-0248

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Improvement of crystal quality of AlN gr
โœ Mu-Jen Lai; Liann-Be Chang; Tzu-Tao Yuan; Ray-Ming Lin ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 142 KB ๐Ÿ‘ 1 views

## Abstract The crystalline quality of aluminum nitride (AlN) epilayers grown on sapphire substrates by MOCVD was improved by increasing hydrogen flow rate during the high temperature growth process. The AlN epilayer exhibited a root mean square (rms) of roughness was 1.944 nm from the 2ร—2 ยตm^2^ si