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Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures

✍ Scribed by R.B. Dunford; A. Ahmed; D.J. Paul; M. Pepper; A.C. Churchill; D.J. Robbins; A.J. Pidduck

Book ID: 104305459
Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 528 KB
Volume: 53
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(00)00297-5

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✦ Synopsis

Inverted n-type modulated-doped Si/Si0.77Ge0.23 heterostructures have been prepared using ex-situ ion implantation of a virtual substrate for the doping followed by cleaning and the regrowth of the silicon quantum well in the growth system. At 1.7K sample mobilities of 1.5-7.3xl04cm:/Vs and carrier densities of 4.25-14.5 lxl0 t~cm "2 were obtained. The sample mobility was observed to decrease with increasing ion dose (and carrier density). Clear Shubnikov-de Haas oscillations and quantum Hall effect plateaux were visible, demonstrating the quality of the technique.

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