✦ LIBER ✦
Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD
✍ Scribed by Doohwan Lee; Shinobu Takehiro; Masao Sakuraba; Junichi Murota; Toshiaki Tsuchiya
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 312 KB
- Volume
- 224
- Category
- Article
- ISSN
- 0169-4332
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