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Electron heating in Al0.15Ga0.85N/GaN heterostructures grown on p-type Si

โœ Scribed by Li-Hung Lin; Kui-Ming Chen; Shiou-Shian Han; C.-T. Liang; Wen-Chang Hsueh; Kuang Yao Chen; Zhi-Hao Sun; P.H. Chang; N.C. Chen; Chin-An Chang

Book ID
104084763
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
242 KB
Volume
40
Category
Article
ISSN
1386-9477

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โœฆ Synopsis

The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiN x treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of T e $I 1.42 was obtained, which is in contrast to T e $I 0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample.

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