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Inverse modeling and its application in the design of high electron mobility transistors

✍ Scribed by Hyungkeun Ahn; El Nokali, M.A.

Book ID: 114536051
Publisher: IEEE
Year: 1995
Tongue: English
Weight: 673 KB
Volume: 42
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.372060

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