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An analytical and computer-aided model of the AlGaAs/GaAs high electron mobility transistor

✍ Scribed by Guan-Wu Wang; Ku, W.H.


Book ID
114595562
Publisher
IEEE
Year
1986
Tongue
English
Weight
702 KB
Volume
33
Category
Article
ISSN
0018-9383

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Analytical noise model of a high-electro
✍ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 154 KB

## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient