Interfacial charge phenomena at the semiconductor/gate insulator interface in organic field effect transistors
β Scribed by Eiji Itoh; Keiichi Miyairi
- Book ID
- 108288912
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 362 KB
- Volume
- 499
- Category
- Article
- ISSN
- 0040-6090
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## Abstract Electronic trap states at the interface of the gate insulator and the organic semiconductor play a decisive role for the currentβvoltage characteristic of organic field effect transistors. In this article two techniques will be introduced which eliminate and generate those trap states o
In this study, we report on the dependence of the charge carrier mobility l on the organic semiconductor thickness in organic field-effect transistors (OFETs) fabricated in top-gate architecture on flexible and transparent plastic foils as substrates with regio-regular poly-(3-hexylthiophene) (rr-P3