Electronic states at the dielectric/semiconductor interface in organic field effect transistors

✍ Scribed by Benson, Niels ;Melzer, Christian ;Schmechel, Roland ;Seggern, Heinz von

• Book ID: 105364517
• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 439 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200723421

✦ Synopsis

Abstract

Electronic trap states at the interface of the gate insulator and the organic semiconductor play a decisive role for the current–voltage characteristic of organic field effect transistors. In this article two techniques will be introduced which eliminate and generate those trap states on SiO~2~ as well as polymer dielectric interfaces, respectively. Employing these interface modifications, p‐ and n‐type pentacene field‐effect transistors as well as an organic CMOS inverter with a single organic semiconductor and a single type of source–drain metallization were engineered. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)