VB-4 insulated gate field effect transistors with the conduction channel placed at semiconductor-semiconductor interfaces

✍ Scribed by Chen, C.Y.; Cho, A.Y.; Gossard, A.C.

• Book ID: 114594269
• Publisher: IEEE
• Year: 1982
• Tongue: English
• Weight: 197 KB
• Volume: 29
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1982.20991