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Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wells

✍ Scribed by Fasol, G.; Tanaka, M.; Sakaki, H.; Horikoshi, Y.


Book ID
127244824
Publisher
The American Physical Society
Year
1988
Tongue
English
Weight
453 KB
Volume
38
Category
Article
ISSN
1098-0121

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## Abstract We have investigated the characteristics of the intense terahertz (THz) electromagnetic radiation in (GaAs)~35~/(AlAs)~35~ multiple quantum wells with an optical gating method, where the radiation source is coherent longitudinal optical (LO) phonons confined in the GaAs layers. It is fo